ION BEAM INDUCED EFFECTS IN THIN-FILM ANALYSISOECHSNER H.1983; FRESENIUS ZEITSCHRIFT FUER ANALYTISCHE CHEMIE; ISSN 0016-1152; DEU; DA. 1983; VOL. 314; NO 3; PP. 211-214; ABS. GER; BIBL. 17 REF.Conference Paper

SPUTTERING - A REVIEW OF SOME RECENT EXPERIMENTAL AND THEORETICAL ASPECTS.OECHSNER H.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 3; PP. 185-198; BIBL. 2 P.Article

ELECTRON CYCLOTRON WAVE RESONANCES AND POWER ABSORPTION EFFECTS IN ELECTRODELESS LOW PRESSURE H.F. PLASMAS WITH A SUPERIMPOSED STATIC MAGNETIC FIELD.OECHSNER H.1974; PLASMA PHYS.; G.B.; DA. 1974; VOL. 16; NO 9; PP. 835-844; BIBL. 22 REF.Article

ELECTRON YIELDS FROM CLEAN POLYCRYSTALLINE METAL SURFACES BY NOBLE-GAS-ION BOMBARDMENT AT ENERGIES AROUND 1 KEV.OECHSNER H.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 3; PP. 1052-1056; BIBL. 23 REF.Article

Ion and plasma beam assisted thin film deposition = Dépôt de couches minces assisté par plasma et faisceau ioniqueOECHSNER, H.Thin solid films. 1989, Vol 175, Num 1-2, pp 119-127, issn 0040-6090Conference Paper

QUANTITATIVE ANALYSIS OF THIN OXIDE LAYERS ON TANTALUM BY SPUTTERED NEUTRAL MASS SPECTROMETRY (SNMS) = ANALYSE QUANTITATIVE DE COUCHES FINES D'OXYDE SUR LE TANTALE PAR SPECTROMETRIE DE MASSE NEUTRE AVEC PULVERISATION (SNMS)OECHSNER H; WUCHER A.1982; APPL. SURF. SCI.; ISSN 0378-5963; NLD; DA. 1982; VOL. 10; NO 3; PP. 342-348; BIBL. 11 REF.Article

SPATIAL DISTRIBUTIONS OF PLASMA DENSITY IN A HIGH-FREQUENCY DISCHARGE WITH A SUPERIMPOSED STATIC MAGNETIC FIELDSZUSZCZEWICZ EP; OECHSNER H.1972; PHYS. OF FLUIDS; U.S.A.; DA. 1972; VOL. 15; NO 12; PP. 2240-2246; BIBL. 10 REF.Serial Issue

REAKTIONEN DES HEXAPHENYLCARBODIPHOSPHORANS. IV: REAKTIONEN DES HEXAPHENYLCARBODIPHOSPHORANS MIT HALOGENVERBINDUNGEN. DIPHOSPHAALLYLKATIONEN = REACTIONS DE L'HEXAPHENYL CARBODIPHOSPHORANE. IV: REACTIONS DE L'HEXAPHENYL CARBODIPHOSPHORANE AVEC LES COMPOSES HALOGENES: CATIONS DIPHOSPHAALLYLBESTMANN HJ; OECHSNER H.1983; ZEITSCHRIFT FUER NATURFORSCHUNG. TEIL B. ANORGANISCHE CHEMIE, ORGANISCHE CHEMIE; ISSN 0340-5087; DEU; DA. 1983; VOL. 38; NO 7; PP. 861-865; ABS. ENG; BIBL. 10 REF.Article

Inorganic mass spectrometry for surface and thin film analysisOECHSNER, H.Analytica chimica acta. 1983, Vol 283, Num 1, pp 131-138, issn 0003-2670Conference Paper

A METHOD FOR SURFACE ANALYSIS BY SPUTTERED NEUTRALSOECHSNER H; GERHARD W.1972; PHYS. LETTERS, A; NETHERL.; DA. 1972; VOL. 40; NO 3; PP. 211-212; BIBL. 3 REF.Serial Issue

SPUTTERED NEUTRAL MASS SPECTROMETRY (SNMS) AS A TOOL FOR CHEMICAL SURFACE ANALYSIS AND DEPTH PROFILING.OECHSNER H; STUMPE E.1977; APPL. PHYS.; GERM.; DA. 1977; VOL. 14; NO 1; PP. 43-47; BIBL. 10 REF.Article

AES-UNTERSUCHUNGEN ZUR IONENBESCHUSS-UNTERSTUETZTEN OXIDATION VON NIOB = ETUDES PAR SPECTROMETRIE ELECTRONIQUE AUGER D'OXYDATION FACILITEE PAR BOMBARDEMENT IONIQUE DU NIOBIUMETZKORN HW; WAHRHUSEN J; OECHSNER H et al.1983; FRESENIUS ZEITSCHRIFT FUER ANALYTISCHE CHEMIE; ISSN 0016-1152; DEU; DA. 1983; VOL. 314; NO 3; PP. 265; BIBL. 6 REF.Conference Paper

COMPARATIVE SNMS AND SIMS STUDIES OF OXIDIZED CE AND GD = ETUDE COMPARATIVE PAR SNMS ET SIMS DE CE ET GD OXYDESOECHSNER H; RUEHE W; STUMPE E et al.1979; SURF. SCI.; NLD; DA. 1979; VOL. 85; NO 2; PP. 289-301; BIBL. 14 REF.Article

SPUTTERING OF TA₂O₅ BY AR⁺ IONS AT ENERGIES BELOW 1 KEV.OECHSNER H; SCHOOF H; STUMPE E et al.1978; SURF. SCI.; NLD; DA. 1978; VOL. 76; NO 2; PP. 343-354; BIBL. 20 REF.Article

On the stoichiometry condition for the formation of cubic boron nitride films : Vacuum based science and technologyLE, Y. K; OECHSNER, H.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 5, pp 681-685, issn 0947-8396, 5 p.Article

In situ STM and AES studies on the oxidation of Cr(110)MÜLLER, M; OECHSNER, H.Surface science. 1997, Vol 387, Num 1-3, pp 269-278, issn 0039-6028Article

Study of ionization process in sputtering of LiFSROUBEK, Z; OECHSNER, H.Surface science. 1994, Vol 311, Num 1-2, pp 263-268, issn 0039-6028Article

The influence of polarizability on the emission of sputtered molecular ionsGNASER, H; OECHSNER, H.Surface science. 1994, Vol 302, Num 1-2, pp L289-L292, issn 0039-6028Article

Yields and composition changes in low-energy sputtering of binary alloys : experiments and computer simulationsGNASER, H; OECHSNER, H.Physical review. B, Condensed matter. 1993, Vol 47, Num 21, pp 14093-14102, issn 0163-1829Article

Novel detection scheme for the analysis of hydrogen and helium by secondary ion mass spectrometryGNASER, H; OECHSNER, H.Surface and interface analysis. 1991, Vol 17, Num 9, pp 646-649, issn 0142-2421Article

High dose, low energy implantation of nitrogen in silicon, niobium and aluminiumFÜSSER, H.-J; OECHSNER, H.Surface & coatings technology. 1991, Vol 48, Num 2, pp 97-102, issn 0257-8972Article

Stoichiometry effects at NiMo surfaces under bombardment with Ar⁺ ions from 40 to 2000 eV = Stoechiometrische Effekte bei NiMo-Oberflaechen unter dem Beschuss von Ar⁺-Ionen bei 40 bis 2000 eVBARTELLA, J; OECHSNER, H.Surface science. 1983, Vol 126, Num 1-3, pp 581-588, issn 0039-6028Article

Preferential sputtering of isotopes: fluence and emission-angle dependenceGNASER, H; OECHSNER, H.Physical review letters. 1989, Vol 63, Num 24, pp 2673-2676, issn 0031-9007, 4 p.Article

Compositional and structural studies of ion beam deposited high-T_c oxide films by SNMS and REMMOÊSSNER, C; OECHSNER, H.Vacuum. 1991, Vol 42, Num 4, pp 291-296, issn 0042-207X, 6 p.Conference Paper

Dissolution of anodic Ta₂O₅ layers into polycrystalline tantalumGIBER, J; OECHSNER, H.Thin solid films. 1985, Vol 131, Num 3-4, pp 279-287, issn 0040-6090Article